2SC4647

2SC4647 Silicon NPN Triple Diffused Application High voltage amplifier Features High break down voltage V(BR)CEO = 300 V min. Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC4647 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 100 400 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO hFE VCE(sat) fT Cob Min 300 300 5 — 30 — 50 — Typ — — — — — — — — Max — — — 1.0 200 1.5 — 4.0 V MHz pF Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 250 V, RBE = ∞ VCE = 20 V, IC = 20 mA I C = 20 mA, IB = 2 mA VCE = 20 V, IC = 20 mA VCE = 20 V, IE = 0, f = 1 MHz 2 2SC4647 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 Collector Current IC (mA) Typical Output Characteristics 1.0 16 14 0.8 12 10 8 0.4 0.2 6 4 2 µA IB = 0 0 50 100 Ambient Temperature Ta (°C) 150 0.4 0.8 1.2 1.6 2.0 0 Collector to Emitter Voltage VCE (V) 400 0.6 200 Typical Transfer Characteristics 100 ...