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2SC4604

Part Number	2SC4604
Manufacturer	Toshiba Semiconductor
Description	NPN TRANSISTOR
Published	Apr 3, 2005
Detailed Description	2SC4604 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4604 Power Amplifier Application. Power Switchin...
Datasheet	2SC4604 PDF File

Overview

2SC4604 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4604 Power Amplifier Application.
Power Switching Applications.
Unit: mm • • • Low collector-emitter saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 1.
5 A) High-speed switching: tstg = 0.
5 µs (typ.
) Complementary to 2SA1761 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 50 6 3 0.
6 900 150 −55 to 150 Unit V V V A A mW °C °C JEDEC JEITA TOSHIBA TO-92MOD ― 2-5J1A Weight: 0.
36 g (typ.
) Electrical C...

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