2SC4596E
GENERAL DESCRIPTION
SILICON EPITAXIAL PLANNAR TRANSISTOR
High frequency, high power NPNtransistors in a plastic envelope, primarily for use in audio and general purpose
QUICK REFERENCE DATA
SYMBOL
TO-220F
CONDITIONS VBE = 0V MIN MAX 100 60 5 25 1.5 1.5 0.5 UNIT V V A A W V V s
VCESM VCEO IC ICM Ptot VCEsat VBE tf
PARAMETER Collector-emitter v...
