2SC4519

Ordering number:EN3138 NPN Epitaxial Planar Silicon Transistors 2SC4519 High-Speed Switching Applications Features · Adoption of FBET process. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small-sized package. Package Dimensions unit:mm 2018A [2SC4519] 0.4 3 0.16 0~0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE1 hFE2 fT Cob VCB=45V, IE=0 VEB=3V, IC=0 VCE=2V, IC=50mA VCE=2V, IC=500mA VCE=2V, IC=50mA VCB=10V, f=1MHz * : The 2SC4519 is classified by 50mA hFE as follows : 100 4 200 140 5 280 200 6 400 Marking : TT hFE rank : 4, 5, 6 0.8 1.1 1 : Base 2 : Emitter 3 : Collector SANYO : CP Ratings 60 45 5 500 1 200 150 –55 to +150 Unit V V V mA A mW ˚C ˚C Ratings min typ 100* 40 350 4 max 0.5 0.5 400* Unit µA µA MHz pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other appli...