2SC4512

2SC4512 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1726) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4512 120 80 6 6 3 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) 2SC4512 10max 10max 80min 50min 0.5max 20typ 110typ V MHz pF 12.0min sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB ∗hFE Rank Conditions VCB=120V VEB=6V IC=25mA VCE=4V, IC=2A IC=5A, IB=0.2A VCE=12V, IE=–0.5A VCB=10V, f=1MHz External Dimensions MT-25(TO220) 3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1 Unit µA µA 16.0±0.7 V 8.8±0.2 a b ø3.75±0.2 O(50 to100), P(70 to140), Y(90 to180) 2.5 B C E 4.0max 1.35 0.65 +0.2 -0.1 2.5 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 30 RL (Ω) 10 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.3 IB2 (A) –0.3 ton (µs) 0.16typ tstg (µs) 2.60typ tf (µs) 0.34typ Weight : Approx 2.6g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 0m A 15 0m A 1 m 00 A A 80m V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) 6 (V CE =4V) 6 20 Collector Current I C (A) 50 mA Collector Current I C (A) 4 2 4 30mA Cas e Te mp (Cas e Tem ) p) I C =6A 4A 2A 0 0 0.5 1.0 1.5 0 0 0 0 1 2 3 4 –30˚C 25˚C 125 I B =10mA ˚C ( (Case 2 20mA 1 2 1 Base-Emittor Voltage V B E (V) Temp ) 2 Collector-Emitter Voltage V C E (V)...