2SC4502

Transistor 2SC4502 Silicon NPN epitaxial planer type For mtermediate frequency amplification Unit: mm 6.9±0.1 0.15 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 s Features q q q 0.7 4.0 0.65 max. 1.0 1.0 High transition frequency fT. Large collector power dissipation PC. Allowing supply with the radial taping. 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings 50 45 4 50 1 150 –55 ~ +150 Unit 0.45–0.05 0.45–0.05 +0.1 +0.1 Symbol VCBO VCEO VEBO IC PC* Tj Tstg 2.5±0.5 1 2 2.5±0.5 3 V V mA W ˚C ˚C Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion 1.2±0.1 0.65 max. 0.1 0.45+ – 0.05 2.5±0.1 V (HW type) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Common emitter reverse transfer capacitance Power gain (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE VCE(sat) fT Cre PG Conditions VCB = 20V, IE = 0 IC = 100µA, IE = 0 IC = 1mA, IB = 0 IE = 100µA, IC = 0 VCE = 10V, IC = 10µA IC = 20mA, ...