2SC4499(L)/(S)
Silicon NPN Triple Diffused
Application
High speed and high voltage switching
Outline
DPAK
4 4
1
2
...
2SC4499(L)/(S)
Silicon
NPN Triple Diffused
Application
High speed and high voltage switching
Outline
DPAK
4 4
1
2
3 12
S Type
3
1. Base 2. Collector 3. Emitter 4. Collector
L Type
2SC4499(L)/(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
1
Ratings 500 400 10 0.5 1.0 0.75 10 150 –55 to +150
Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current Symbol VCEO(sus) V(BR)EBO I CBO I CEO DC current transfer ratio hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test. VCE(sat) VBE(sat) t on t stg tf Min 400 10 — — 12 5 — — — — — Typ — — — — — — — — — — — Max — — 20 50 — — 1.0 1.5 1.0 2.0 1.0 V V µs µs µs Unit V V µA Test conditions I C = 0.1 A, RBE = ∞ L = 100 mH I E = 10 mA, IC = 0 VCB = 400 V, IE = 0 VCE = 350 V, RBE = ∞ VCE = 5 V, IC = 0.25 A*1 VCE = 5 V, IC = 0.5 A*1 I C = 0.25 A, IB = 0.05 A*1 I C = 0.25 A, IB = 0.05 A*1 I C = 0.5 A, IB1 = –IB2 = 0.1 A, VCC ≅ 150 V
2
2SC4499(L)/(S)
Maximum Collector Dissipation Curve 12 Collector power dissipation PC (W) 10 Area of Safe Operation
Collector current IC (A)
1....