EM566168

EtronTech Features Organized as 1M words by 16 bits Fast Cycle Time : 70ns Standby Current : 100uA Deep power-down Current : 10uA (Memory cell data invalid) Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15) Compatible with low power SRAM Single Power Supply Voltage : 3.0V±0.3V Package Type : 48-ball FBGA, 6x8mm EM566168 1M x 16 Pseudo SRAM Preliminary, Rev 0.2 Apr. 2002 Pin Assignment 48-Ball BGA, Top View 1 2 3 4 5 6 A LB# OE# A0 A1 A2 CE2 B DQ8 UB# A3 A4 CE1# DQ0 C DQ9 DQ10 A5 A6 DQ1 DQ2 Pin Description Symbol A0 – A19 DQ0 – DQ15 CE1# CE2 OE# WE# LB# UB# VCC VSS Function Address Inputs Data Inputs/Outputs Chip Enable Deep Power Down Output Enable Write Control Lower Byte Control Upper Byte Control Power Supply Ground D VSS DQ11 A17 A7 DQ3 VCC E VCC DQ12 NC A16 DQ4 VSS F DQ14 DQ13 A14 A15 DQ5 DQ6 G DQ15 A19 A12 A13 WE# DQ7 H A18 A8 A9 A10 A11 NC Overview The EM566168 is a 16M-bit Pseudo SRAM organized as 1M words by 16 bits. It is designed with advanced CMOS technology specified RAM featuring low power static RAM compatible function and pin configuration. This device operates from a single power supply. Advanced circuit technology provides both high speed and low power. It is automatically placed in low-power mode when CS1# or both UB# and LB# are asserted high or CS2 is asserted low. There are three control inputs. CS1# and CS2 are used to select the device, and output enable (OE#) provides fast memor...