HY62CT08081E-DTE

HY62CT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 5.0V Low Power Slow SRAM Revision History Revision No 00 01 History Initial Marking Information Add Revised - DC / AC Characteristics - AC Test Condition Add : 5pF Test Load Revised - Remove L-Part - Change LL-Part Isb1 Limit @E.T/I.T : 15uA => 20uA Revised - Marking Information Change : SOP Type Changed Logo - HYUNDAI -> hynix - Marking Information Change Draft Date Nov.01.2000 Dec.05.2000 Remark Preliminary Preliminary 02 Feb.13.2001 Final 03 Feb.21.2001 Final 04 Apr.30.2001 Final This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 04 / Apr. 2001 Hynix Semiconductor HY62CT08081E Series DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynix's high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt. FEATURES Fully static operation and Tri-state output TTL compatible inputs and outputs Low power consumption Battery backup - 2.0V(min.) data retention Standard pin configuration - 28 pin 600mil PDIP - 28 pin 330mil SOP - 28 pin 8x13.4 mm TSOP-I (Standard) Standby Current(uA) L...