32Kx8bit CMOS SRAM
HY62CT08081E Series
32Kx8bit CMOS SRAM
Document Title
32K x8 bit 5.0V Low Power Slow SRAM
Revision History
Revision No...
Description
HY62CT08081E Series
32Kx8bit CMOS SRAM
Document Title
32K x8 bit 5.0V Low Power Slow SRAM
Revision History
Revision No 00 01 History Initial Marking Information Add Revised - DC / AC Characteristics - AC Test Condition Add : 5pF Test Load Revised - Remove L-Part - Change LL-Part Isb1 Limit @E.T/I.T : 15uA => 20uA Revised - Marking Information Change : SOP Type Changed Logo - HYUNDAI -> hynix - Marking Information Change Draft Date Nov.01.2000 Dec.05.2000 Remark Preliminary Preliminary
02
Feb.13.2001
Final
03
Feb.21.2001
Final
04
Apr.30.2001
Final
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 04 / Apr. 2001 Hynix Semiconductor
HY62CT08081E Series
DESCRIPTION
The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynix's high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt.
FEATURES
Fully static operation and Tri-state output TTL compatible inputs and outputs Low power consumption Battery backup - 2.0V(min.) data retention Standard pin configuration - 28 pin 600mil PDIP - 28 pin 330mil SOP - 28 pin 8x13.4 mm TSOP-I (Standard) Standby Current(uA) L...
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