HY51V18163HGT-6

HY51V(S)18163HG/HGL 1M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION The HY51V(S)18163HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)18163HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)18163HG/HGL offers Extended Data Out PageMode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)18163HG/HGL to be packaged in standard 400mil 42pin SOJ and 44(50) pin TSOP-II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. FEATURES Extended Data Out Mode capability Read-modify-write capability Multi-bit parallel test capability TTL(3.3V) compatible inputs and outputs /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability Fast access time and cycle time Part No HY51V(S)18163HG/HGL-5 HY51V(S)18163HG/HGL-6 HY51V(S)18163HG/HGL-7 tRAC 50ns 60ns 70ns JEDEC standard pinout 42pin plastic SOJ / 44(50)pin TSOP-II (400mil) Single power supply of 3.3V +/- 0.3V Battery back up operation(L-version) 2CAS byte control tCAC 13ns 15ns 18ns tRC 84ns 104ns 124ns tHPC 20ns 25ns 30ns Power dissipation 50ns Active Standby 684mW 60ns 612mW 70ns 540mW Refresh cycle Part No HY51V18163HG HY51V18163HGL Ref 1K 1K Normal 16ms 128ms L-part 7.2mW(CMOS level Max) 0.83mW (L-version : Max) ORDERING INFORMATION Part Number HY51V(S)18163HGJ/HG...