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HY29F400BT90 Dataheets PDF



Part Number HY29F400BT90
Manufacturers Hynix Semiconductor
Logo Hynix Semiconductor
Description 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
Datasheet HY29F400BT90 DatasheetHY29F400BT90 Datasheet (PDF)

HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current in byte mode, 28 mA typical in word mode – 30 mA typical program/erase current – 5 µA maximum CMOS standby current n Compatible with JEDEC Standards – Package, pinout and command-set compatible with the single-supply Flash device standar.

  HY29F400BT90   HY29F400BT90


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HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current in byte mode, 28 mA typical in word mode – 30 mA typical program/erase current – 5 µA maximum CMOS standby current n Compatible with JEDEC Standards – Package, pinout and command-set compatible with the single-supply Flash device standard – Provides superior inadvertent write protection n Sector Erase Architecture – Boot sector architecture with top and bottom boot block options available – One 16 Kbyte, two 8 Kbyte, one 32 Kbyte and seven 64 Kbyte sectors in byte mode – One 8 Kword, two 4 Kword, one 16 Kword and seven 32 Kword sectors in word mode – A command can erase any combination of sectors – Supports full chip erase n Erase Suspend/Resume – Temporarily suspends a sector erase operation to allow data to be read from, or programmed into, any sector not being erased GENERAL DESCRIPTION The HY29F400 is a 4 Megabit, 5 volt only CMOS Flash memory organized as 524,288 (512K) bytes or 262,144 (256K) words. The device is offered in industry-standard 44-pin PSOP and 48-pin TSOP packages. The HY29F400 can be programmed and erased in-system with a single 5-volt VCC supply. Internally generated and regulated voltages are provided for program and erase operations, so that the device does not require a high voltage power supply to perform those functions. The device can also be programmed in standard EPROM programmers. Access times as fast as 55 ns over the full operating voltage range of 5.0 volts ± 10% are offered for timing compatibility with the zero wait state requirements of high speed microproRevision 5.2, May 2001 n Sector Protection – Any combination of sectors may be locked to prevent program or erase operations within those sectors n Temporary Sector Unprotect – Allows changes in locked sectors (requires high voltage on RESET# pin) n Internal Erase Algorithm – Automatically erases a sector, any combination of sectors, or the entire chip n Internal Programming Algorithm – Automatically programs and verifies data at a specified address n Fast Program and Erase Times – Byte programming time: 7 µs typical – Sector erase time: 1.0 sec typical – Chip erase time: 11 sec typical n Data# Polling and Toggle Status Bits – Provide software confirmation of completion of program or erase operations n Ready/Busy# Output (RY/BY#) – Provides hardware confirmation of completion of program and erase operations n 100,000 Program/Erase Cycles Minimum n Space Efficient Packaging – Available in industry-standard 44-pin PSOP and 48-pin TSOP and reverse TSOP packages LOGIC DIAGRAM 18 A[17:0] DQ[7:0] 7 CE# OE# WE# RESET# BYTE# RY/BY# DQ[14:8] DQ[15]/A-1 8 HY29F400 cessors. A 55 ns version operating over 5.0 volts ± 5% is also available. To eliminate bus contention, the HY29F400 has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device is compatible with the JEDEC single power-supply Flash command set standard. Commands are written to the command register using standard microprocessor write timings, from where they are routed to an internal state-machine that controls the erase and programming circuits. Device programming is performed a byte or word at a time by executing the four-cycle Program command. This initiates an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The HY29F400’s sector erase architecture allows any number of array sectors to be erased and reprogrammed without affecting the data contents of other sectors. Device erasure is initiated by executing the Erase command. This initiates an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase cycles, the device automatically times the erase pulse widths and verifies proper cell margin. To protect data in the device from accidental or unauthorized attempts to program or erase the BLOCK DIAGRAM device while it is in the system (e.g., by a virus), the device has a Sector Protect function which hardware write protects selected sectors. The sector protect and unprotect features can be enabled in a PROM programmer. Temporary Sector Unprotect, which requires a high voltage, allows in-system erasure and code changes in previously protected sectors. Erase Suspend enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved. The device is fully erased when shipped from the factory. Addresses and data needed for the programming and erase operations are internally latched during write cycles, and the host system can detect completion of a program or erase operation by observing the RY/BY# pin, or by reading the DQ[7].


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