HY29F400BG45

HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current in byte mode, 28 mA typical in word mode – 30 mA typical program/erase current – 5 µA maximum CMOS standby current n Compatible with JEDEC Standards – Package, pinout and command-set compatible with the single-supply Flash device standard – Provides superior inadvertent write protection n Sector Erase Architecture – Boot sector architecture with top and bottom boot block options available – One 16 Kbyte, two 8 Kbyte, one 32 Kbyte and seven 64 Kbyte sectors in byte mode – One 8 Kword, two 4 Kword, one 16 Kword and seven 32 Kword sectors in word mode – A command can erase any combination of sectors – Supports full chip erase n Erase Suspend/Resume – Temporarily suspends a sector erase operation to allow data to be read from, or programmed into, any sector not being erased GENERAL DESCRIPTION The HY29F400 is a 4 Megabit, 5 volt only CMOS Flash memory organized as 524,288 (512K) bytes or 262,144 (256K) words. The device is offered in industry-standard 44-pin PSOP and 48-pin TSOP packages. The HY29F400 can be programmed and erased in-system with a single 5-volt VCC supply. Internally generated and regulated voltages are provided for program and erase operations, so that the device does not require a high voltage power supp...