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HVU359

Hitachi Semiconductor
Part Number HVU359
Manufacturer Hitachi Semiconductor
Description Variable Capacitance Diode for VCXO
Published Apr 2, 2005
Detailed Description HVU359 Variable Capacitance Diode for VCXO ADE-208-023C(Z) Rev 3 Dec. 1998 Features • High capacitance ratio and good C...
Datasheet PDF File HVU359 PDF File

HVU359
HVU359

Overview
HVU359 Variable Capacitance Diode for VCXO ADE-208-023C(Z) Rev 3 Dec.
1998 Features • High capacitance ratio and good C-V linearity.
• To be usable at low voltage.
• Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information Type No.
HVU359 Laser Mark S Package Code URP Outline Cathode mark Mark 1 S 2 1.
Cathode 2.
Anode HVU359 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 -55 to +125 Unit V °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Symbol I R1 I R2 Capacitance C1 C4 Capacitance ratio Series resistance ESD-Capability *1 Min — — 24.
8 6.
0 3.
0 — 80...


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