HVU133

HVU133 Silicon Epitaxial Planar Pin Diode for High Frequency Switching ADE-208-377B(Z) Rev 2 Feb. 2000 Features Low capacitance.(C1=1.0pF max) Low forward resistance. (rf=0.7 Ω max) Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HVU133 Laser Mark P3 Package Code URP Outline Cathode mark Mark 1 P3 2 1. Cathode 2. Anode HVU133 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Power dissipation Junction temperature Storage temperature Symbol VR Pd Tj Tstg Value 30 150 125 -55 to +125 Unit V mW °C °C Electrical Characteristics (Ta = 25°C) Item Reverse voltage Reverse current Forward voltage Capacitance Symbol VR IR VF C1 C6 Forward resistance rf Min 30 — — — — — Typ — — — — — 0.55 Max — 100 0.85 1.0 0.9 0.7 Ω Unit V nA V pF Test Condition I R = 1µA VR = 25V I F = 2 mA VR = 1V, f = 1 MHz VR = 6V, f = 1 MHz I F = 2mA, f = 100 MHz 2 HVU133 Main Characteristic 10 -2 10 -10 10-4 Forward current I F (A) Reverse current I R (A) 10 10 -6 -11 Ta= 75°C 10 -12 10 -8 Ta= 50°C Ta= 75°C Ta= 50°C 10 -10 10 -13 Ta= 25°C Ta= 25°C 10 -12 0 0.2 0.4 0.6 0.8 1.0 10-14 0 5 10 15 20 25 30 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage 10 f=1MHz 3 f=100MHz Forward resistance r f (Ω ) 10 Capacitance C (pF) 10 2 1 10 1.0 10 0 0.1 0.1 10 1.0 Reverse voltage VR (V) 10 -1 ...