50C02SP

Ordering number : ENN7518 50C02SP NPN Epitaxial Planar Silicon Transistor 50C02SP Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions unit : mm 2033A [50C02SP] 4.0 3.0 2.2 Low-frequency Amplifer, high-speed switching, small motor drive, muting circuit. Features 0.4 15.0 Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=175mΩ [IC=0.5A, IB=50mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). 0.4 0.5 0.6 1.8 0.4 1 2 1.3 0.7 3 1.3 1 : Emitter 2 : Collector 3 : Base SANYO : SPA Ratings 60 50 5 500 1.0 400 150 --55 to +150 Unit V V V mA A mW °C °C Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 3.0 3.8nom Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=10mA VCE=10V, IC=50mA 300 500 Conditions Ratings min typ max 100 100 800 MHz Unit nA nA Marking : YN 0.7 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliabi...