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4N38 Dataheets PDF



Part Number 4N38
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS
Datasheet 4N38 Datasheet4N38 Datasheet (PDF)

HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. H11D1 H11D2 H11D3 H11D4 4N38 FEATURES • High Voltage - H11D1, H11D2, BVCER = 300 V - H11D3, H11D4, BVCER = 200 V • High isolation voltage - 53.

  4N38   4N38



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HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. H11D1 H11D2 H11D3 H11D4 4N38 FEATURES • High Voltage - H11D1, H11D2, BVCER = 300 V - H11D3, H11D4, BVCER = 200 V • High isolation voltage - 5300 VAC RMS - 1 minute - 7500 VAC PEAK - 1 minute • Underwriters Laboratory (UL) recognized File# E90700 ANODE 1 6 BASE APPLICATIONS • • • • • Power supply regulators Digital logic inputs Microprocessor inputs Appliance sensor systems Industrial controls CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER ABSOLUTE MAXIMUM RATINGS Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C Derate above 25°C EMITTER *Forward DC Current *Reverse Input Voltage *Forward Current - Peak (1µs pulse, 300pps) *LED Power Dissipation @ TA = 25°C Derate above 25°C Symbol TSTG TOPR TSOL PD IF VR IF(pk) PD Value -55 to +150 -55 to +100 260 for 10 sec 260 3.5 80 6.0 3.0 150 1.41 Units °C °C °C mW mW/°C mA V A mW mW/°C 8/9/00 200046A HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1, H11D2, H11D3, H11D4, 4N38 ABSOLUTE MAXIMUM RATINGS (Cont.) Parameter DETECTOR *Power Dissipation @ TA = 25°C Derate linearly above 25°C H11D1 - H11D2 *Collector to Emitter Voltage H11D3 - H11D4 4N38 H11D1 - H11D2 *Collector Base Voltage H11D3 - H11D4 4N38 *Emitter to Collector Voltage Collector Current (Continuous) H11D1 - H11D2 H11D3 - H11D4 VECO VCBO VCER PD Symbol Value 300 4.0 300 200 80 300 200 80 7 100 mA V Units mW mW/°C ELECTRICAL CHARACTERISTICS Characteristic EMITTER *Forward Voltage Forward Voltage Temp. Coefficient Reverse Breakdown Voltage Junction Capacitance *Reverse Leakage Current DETECTOR *Breakdown Voltage Collector to Emitter *Collector to Base Emitter to Base Emitter to Collector *Leakage Current Collector to Emitter (RBE = 1 M") (TA = 25°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Test Conditions (IF = 10 mA) Symbol VF ! VF !TA BVR CJ IR BVCER BVCEO BVCBO BVEBO BVECO Device ALL ALL ALL ALL ALL ALL H11D1/2 H11D3/4 4N38 H11D1/2 H11D3/4 4N38 4N38 ALL H11D1/2 ICER H11D3/4 ICEO 4N38 6 Min Typ** 1.15 -1.8 25 50 65 0.05 Max 1.5 Unit V mV/°C V pF pF µA (IR = 10 µA) (VF = 0 V, f = 1 MHz) (VF = 1 V, f = 1 MHz) (VR = 6 V) (RBE = 1 M") (IC = 1.0 mA, IF = 0) (No RBE) (IC = 1.0 mA) (IC = 100 µA, IF = 0) 10 (IE = 100 µA , IF = 0) (VCE = 200 V, IF = 0, TA = 25°C) (VCE = 200 V, IF = 0, TA = 100°C) (VCE = 100 V, IF = 0, TA = 25°C) (VCE = 100 V, IF = 0, TA = 100°C) (No RBE) (VCE = 60 V, IF = 0, TA = 25°C) 300 200 80 300 200 80 7 7 V 10 100 250 100 250 50 nA µA nA µA nA Notes * Parameters meet or exceed JEDEC registered data (for 4N38 only) ** All typical values at TA = 25°C 8/9/00 200046A .


4N38 4N38 4N38A


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