Document
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS
DESCRIPTION
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
H11D1 H11D2 H11D3 H11D4 4N38
FEATURES
• High Voltage - H11D1, H11D2, BVCER = 300 V - H11D3, H11D4, BVCER = 200 V • High isolation voltage - 5300 VAC RMS - 1 minute - 7500 VAC PEAK - 1 minute • Underwriters Laboratory (UL) recognized File# E90700
ANODE 1
6 BASE
APPLICATIONS
• • • • • Power supply regulators Digital logic inputs Microprocessor inputs Appliance sensor systems Industrial controls
CATHODE 2
5 COLLECTOR
N/C 3
4 EMITTER
ABSOLUTE MAXIMUM RATINGS
Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C Derate above 25°C EMITTER *Forward DC Current *Reverse Input Voltage *Forward Current - Peak (1µs pulse, 300pps) *LED Power Dissipation @ TA = 25°C Derate above 25°C Symbol TSTG TOPR TSOL PD IF VR IF(pk) PD Value -55 to +150 -55 to +100 260 for 10 sec 260 3.5 80 6.0 3.0 150 1.41 Units °C °C °C mW mW/°C mA V A mW mW/°C
8/9/00
200046A
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS
H11D1, H11D2, H11D3, H11D4, 4N38
ABSOLUTE MAXIMUM RATINGS (Cont.)
Parameter DETECTOR *Power Dissipation @ TA = 25°C Derate linearly above 25°C H11D1 - H11D2 *Collector to Emitter Voltage H11D3 - H11D4 4N38 H11D1 - H11D2 *Collector Base Voltage H11D3 - H11D4 4N38 *Emitter to Collector Voltage Collector Current (Continuous) H11D1 - H11D2 H11D3 - H11D4 VECO VCBO VCER PD Symbol Value 300 4.0 300 200 80 300 200 80 7 100 mA V Units mW mW/°C
ELECTRICAL CHARACTERISTICS
Characteristic EMITTER *Forward Voltage Forward Voltage Temp. Coefficient Reverse Breakdown Voltage Junction Capacitance *Reverse Leakage Current DETECTOR *Breakdown Voltage Collector to Emitter *Collector to Base Emitter to Base Emitter to Collector *Leakage Current Collector to Emitter (RBE = 1 M")
(TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Test Conditions (IF = 10 mA) Symbol VF ! VF !TA BVR CJ IR BVCER BVCEO BVCBO BVEBO BVECO Device ALL ALL ALL ALL ALL ALL H11D1/2 H11D3/4 4N38 H11D1/2 H11D3/4 4N38 4N38 ALL H11D1/2 ICER H11D3/4 ICEO 4N38 6 Min Typ** 1.15 -1.8 25 50 65 0.05 Max 1.5 Unit V mV/°C V pF pF µA
(IR = 10 µA) (VF = 0 V, f = 1 MHz) (VF = 1 V, f = 1 MHz) (VR = 6 V) (RBE = 1 M") (IC = 1.0 mA, IF = 0) (No RBE) (IC = 1.0 mA) (IC = 100 µA, IF = 0)
10
(IE = 100 µA , IF = 0) (VCE = 200 V, IF = 0, TA = 25°C) (VCE = 200 V, IF = 0, TA = 100°C) (VCE = 100 V, IF = 0, TA = 25°C) (VCE = 100 V, IF = 0, TA = 100°C) (No RBE) (VCE = 60 V, IF = 0, TA = 25°C)
300 200 80 300 200 80 7 7
V
10 100 250 100 250 50 nA µA nA µA nA
Notes * Parameters meet or exceed JEDEC registered data (for 4N38 only) ** All typical values at TA = 25°C
8/9/00
200046A
.