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4N37

Toshiba Semiconductor

PHOTO TRANSISTOR

4N35,4N36,4N37(Short) TOSHIBA Photocoupler GaAs IRed & Photo−Transistor 4N35(Short), 4N36(Short), 4N37(Short) AC Line /...


Toshiba Semiconductor

4N37

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Description
4N35,4N36,4N37(Short) TOSHIBA Photocoupler GaAs IRed & Photo−Transistor 4N35(Short), 4N36(Short), 4N37(Short) AC Line / Digital Logic Isolator. Digital Logic / Digital Logic Isolator. Telephone Line Receiver. High Frequency Power Supply Feedback Control. Relay Contact Monitor. The TOSHIBA 4N35 (short) through 4N37 (short) consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in−line package. · Switching speeds: 3µs (typ.) · DC current transfer ratio: 100% (min.) · Isolation resistance: 1011Ω (min.) · Isolation voltage: 2500Vrms (min.) · UL recognized: UL1577, file no. E67349 Unit in mm TOSHIBA Weight: 0.4 g 11−7A8 Pin Configurations(top view) 1 2002-09-25 4N35,4N36,4N37(Short) Maximum Ratings (Ta = 25°C) LED Detector Characteristic Symbol Rating Unit Forward current (continuous) Forward current derating Peak forward current Power dissipation Power dissipation derating Reverse voltage Collector-emitter voltage Collector-base voltage Emitter-collector voltage Collector current (continuous) Power dissipation Power dissipation derating Storage temperature Operating temperature Lead soldering temperature (at 10 s) Total package power dissipation Total package power dissipation derating Input to output isolation voltage (AC, 1 minute) (Note 1) 4N35 4N36 4N37 IF ∆IF/°C IPF PD ∆PD / °C VR BVCEO BVCBO BVECO IC PC ∆PC / °C Tstg Topr Tsol PT ∆PT / °C BVS BVS (**) 60 0.8 (*) 3 100 1.33 (*) 6 30 70 7 100 300 4.0 (*) -55~1...




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