4GBU02F

PART OBSOLETE - EOL18 Bulletin I2717 rev. G 05/02 4GBU Series 4.0 Amps Single Phase Full Wave Features Diode chips are glass passivated Suitable for Universal hole mounting Easy to assemble & install on P.C.B. High Surge Current Capability High Isolation between terminals and molded case (1500 V RMS) Lead free terminals solderable as per MIL-STD-750 Method 2026 Terminals suitable for high temperature soldering at 260°C for 8-10 secs UL E160375 approved Bridge Rectifier IO(AV) = 4A VRRM = 50/ 800V Description These GBU Series of Single Phase Bridges consist of four glass passivated silicon junction connected as a Full Wave Bridge. These four junctions are encapsulated by plastic molding technique. These Bridges are mainly used in Switch Mode power supply and in industrial and consumer equipment. Major Ratings and Characteristics Parameters IO @ TC IFSM @ 50Hz @ 60Hz I t 2 4GBU 4 100 150 158 113 104 50 to 800 - 55 to 150 Units A °C A A A2s A2s V o @ 50Hz @ 60Hz 4GBU VRRM TJ range C www.irf.com 1 4GBU Series Bulletin I2717 rev. G 05/02 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code VRRM , max repetitive peak rev. voltage TJ = TJ max. V 50 100 200 400 600 800 VRMS , max RMS voltage TJ = TJ max. V 35 70 140 280 420 560 IRRM max. @ rated VRRM TJ = 25°C µA 5 5 5 5 5 5 IRRM max. @ rated VRRM TJ = 150°C µA 400 400 400 400 400 400 4GBU 4GBU...F 005 01 02 04 06 08 Forward Conduction Parameters IO IFSM Maximum DC output current Maximum peak, one-cy...