Silicon N Channel MOS FET High Speed Power Switching
Description
4AK27
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-728 (Z) 1st. Edition January 1999 Features
Low on-resistance R DS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A 4V gate drive devices. High density mounting
Outline
SP-10
3 D 2G 4 G
5 D 6 G
7 D 8 G
9 D
12 34 56 78 9 10
1 S
S 10
1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain
4AK27
Abso...
