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4AK26 Dataheets PDF



Part Number 4AK26
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon N-Channel Power MOS FET Array
Datasheet 4AK26 Datasheet4AK26 Datasheet (PDF)

4AK26 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.06 , VGS = 10 V, I D = 5 A R DS(on) ≤ 0.075 , VGS = 4 V, I D = 5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver and solenoid driver and lamp driver Outline SP-12 12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 34 56 78 9 10 1112 S 3 S 6 S 7 S 10 1, 5, 8, 12. Gate 2, 4, 9, 11. Drain 3, 6, 7, 10. .

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4AK26 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.06 , VGS = 10 V, I D = 5 A R DS(on) ≤ 0.075 , VGS = 4 V, I D = 5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver and solenoid driver and lamp driver Outline SP-12 12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 34 56 78 9 10 1112 S 3 S 6 S 7 S 10 1, 5, 8, 12. Gate 2, 4, 9, 11. Drain 3, 6, 7, 10. Source 4AK26 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 Devices operation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25°C)* Pch* Tch Tstg 2 2 1 Ratings 60 ±20 10 32 10 28 4 150 –55 to +150 Unit V V A A A W W °C °C 2 4AK26 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 ±20 — — 1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 10 — — — — — — — — — Typ — — — — — 0.045 0.056 12 1400 720 220 15 95 300 170 1.05 110 Max — — ±10 250 2.0 0.06 0.075 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V µs I F = 10 A, VGS = 0 I F = 10 A, VGS = 0, dIF/dt = 50 A/µs Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 5 A VGS = 10 V*1 ID = 5 A VGS = 4 V*1 ID = 5 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz I D = 10 A VGS = 10 V RL = 3 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) 3 4AK26 Maximum Channel Dissipation Curve 6 Pch (W) 5 4 3 2 1 Pch (W) Condition : Channel dissipation of each die is idetical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 30 Maximum Channel Dissipation Curve Condition : Channel dissipation of each die is idetical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 20 Channel Dissipation Channel Dissipation 10 0 25 50 75 100 125 150 Ambient Temperature Ta (°C) 0 25 50 75 100 125 Case Temperature Tc (°C) 150 Typical Output Characteristics 50 10 V 8V 6V Typical Transfer Characteristics 50 75°C VDS = 10 V Pulse Test TC= 25°C –25°C 4.5 V Drain Current ID (A) 4.0 V Pulse Test 3.5 V 40 Drain Current ID (A) 40 30 30 20 3.0 V 20 10 VGS = 2.5 V 10 0 6 2 4 8 10 Drain to Source Voltage VDS (V) 0 3 1 2 4 Gate to Source Voltage VGS (V) 5 4 4AK26 Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 Drain to Source Saturation Voltage VDS (on) (V) Pulse Test Static Drain to Source on Static Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 4 0.2 VGS = 4 V 3 ID = 50 A 0.1 0.05 10 V 2 0.02 0.01 0.005 1 2 50 10 5 20 Drain Current ID (A) 100 1 20 A 10 A 0 6 2 4 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) (Ω) Pulse Test ID = 20 A 10 A VGS = 4 V 10 A Forward Transfer Admittance yfs (S) Forward Transfer Admittance vs. Drain Current 100 50 VDS = 10 V Pulse Test –25°C TC = 25°C 0.10 0.08 0.06 20 10 5 2 1 0.5 75°C 20 A 5 A 0.04 5A 0.02 VGS = 10 V 0 –40 80 0 40 120 Case Temperature TC (°C) 160 1.0 2 10 20 5 Drain Current ID (A) 50 5 4AK26 Body to Diode Reverse Recovery Time 1,000 Reverse Recovery Time trr (ns) di/dt = 50 A/µs, Ta = 25°C VGS = 0 Pulse Test Capacitance C (pF) 10,000 3,000 Ciss 1,000 Coss 300 Crss 100 30 10 2 1.0 5 10 20 Reverse Drain Current IDR (A) 50 0 10 20 30 40 50 Drain to Source Voltage VDS (V) VGS = 0 f = 1 MHz Typical Capacitance vs. Drain to Source Voltage 500 200 100 50 20 10 0.5 Dynamic Input Characteristics 100 Drain to Source Voltage VDS (V) VDD = 50 V 80 25 V 10 V 60 VDS 40 20 VDD = 50 V 25 V 10 V VGS 12 16 20 Gate to Source Voltage VGS (V) 1000 500 Switching Time t (ns) Switching Characteristics td (off) tf 200 100 tr 50 20 10 0.5 8 4 ID = 25 A 0 100 VGS = 10 V VDD = 30 V PW = 2µs, duty < 1 % • • td (on) 1.0 2 5 10 20 Drain Current ID (A) 50 0 20 40 60 80 Gate Charge Qg (nc) 6 4AK26 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current IDR (A) 40 Pulse Test 30 10 V 15 V 20 5V 10 VGS = 0, –5 V 0 0.8 0.4 1.2 2.0 1.6 Source to Drain Voltage VSD (V) 7 Unit: mm 31.0 ± 0.3 4.0 ± 0.2 2.7 10.0 ± 0.3 10.5 ± 0.5 1.5 ± 0.2 0.85 ± 0.1 1.4 2.54 0.55 –0.06 +0.1 1 2 3 4 5 6 7 8 9 1.


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