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4AK26

Hitachi Semiconductor
Part Number 4AK26
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel Power MOS FET Array
Published Apr 1, 2005
Detailed Description 4AK26 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(o...
Datasheet PDF File 4AK26 PDF File

4AK26
4AK26

Overview
4AK26 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.
06 , VGS = 10 V, I D = 5 A R DS(on) ≤ 0.
075 , VGS = 4 V, I D = 5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver and solenoid driver and lamp driver Outline SP-12 12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 34 56 78 9 10 1112 S 3 S 6 S 7 S 10 1, 5, 8, 12.
Gate 2, 4, 9, 11.
Drain 3, 6, 7, 10.
Source 4AK26 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Ch...


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