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4AK23

Part Number	4AK23
Manufacturer	Hitachi Semiconductor
Description	Silicon N-Channel Power MOS FET Array
Published	Apr 1, 2005
Detailed Description	4AK23 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(o...
Datasheet	4AK23 PDF File

Overview

4AK23 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.
25 , VGS = 10 V, I D = 2.
5 A • Low drive current • High speed switching • High density mounting • Suitable for H-bridged motor driver Outline SP-12TA 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 12 3 4 5 6 7 8 9 10 1112 S 3 S 6 S 7 S 10 1, 5, 8, 12.
Gate 2, 4, 9, 11.
Drain 3, 6, 7, 10.
Source 4AK23 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10...

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