4AK22

4AK22 Silicon N-Channel Power MOS FET Array Application High speed power switching Features Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5 A R DS(on) 0.55 , VGS = 4 V, I D = 1.5 A Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for motor driver, solenoid driver and lamp driver Discrete packaged devices of same die: 2SK1254(L), 2SK1254(S) 4AK22 Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain Absolute Maximum Ratings (Ta = 25°C) (1 Unit) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 devices operation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25°C)* Pch* Tch Tstg 2 2 1 Rating 120 ±20 3 12 3 28 4 150 –55 to +150 Unit V V A A A W W °C °C 2 4AK22 Electrical Characteristics (Ta = 25°C) (1 Unit) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 120 ±20 — — 1.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2.0 — — — — — — — — — Typ — — — — — 0.3 0.35 3.5 420 190 25 5 20 160 40 0.95 160 Max — — ±10 100 2.0 0.4 0.55 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 3 A, VGS = 0 I F = 3 A, VGS = 0 dIF/dt = 50...