4AK22
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5 A R DS(on) 0.55 , VGS = 4 V, I D = 1.5 A Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for motor driver, solenoid driver and lamp driver Discrete p...
