4AK20
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A R DS(on) 0.35 , VGS = 4 V, I D = 2.5 A Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for motor driver, solenoid driver and lamp driver Discrete ...
