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4AK19 Dataheets PDF



Part Number 4AK19
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet 4AK19 Datasheet4AK19 Datasheet (PDF)

4AK19 Silicon N Channel MOS FET High Speed Power Switching ADE-208-727 (Z) 1st. Edition February 1999 Features • Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A • 4 V gate drive devices. • High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1 S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain 4AK19 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage .

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4AK19 Silicon N Channel MOS FET High Speed Power Switching ADE-208-727 (Z) 1st. Edition February 1999 Features • Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A • 4 V gate drive devices. • High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1 S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain 4AK19 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 devices poeration Symbol VDSS VGSS ID I D(pulse) I DR Pch(Tc = 25°C) Pch Tch Tstg Note2 Note2 Note1 Ratings 120 ±20 5 10 5 28 3.5 150 –55 to +150 Unit V V A A A W W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 120 ±20 — — 1.0 — — 3 — — — — — — — — — — Typ — — — — — 0.3 0.35 5 25 140 3 2.5 0.3 0.45 6.6 1.4 1.1 600 Max — — 100 ±10 2.0 0.5 0.6 — — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF kΩ µs µs µs µs V ns I F = 5 A, VGS = 0 I F = 5 A, VGS = 0 diF/ dt = 50A/ µs Test Conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VDS = 100 V, VGS = 0 VGS = ±16 V, VDS = 0 I D = 1 mA, VDS = 10 V I D = 2.5 A, VGS = 10 V Note3 I D = 2.5 A, VGS = 4 V Note3 I D = 2.5 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz VDS = 0, VGS = 0, f = 1 MHz VGS = 10 V, ID = 2.5 A RL = 12 Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate series resistance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 3. Pulse test I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg t d(on) tr t d(off) tf VDF t rr 2 4AK19 Main Characteristics Maximum Channel Dissipation Curve 8 Pch (W) Pch (W) Condition : Channel dissipation of each die is idetical 6 4 Device Operation 4 3 Device Operation 2 Device Operation 1 Device Operation 2 Maximum Channel Dissipation Curve 46 Condition : Channel dissipation of each die is idetical 32 4 Device Operation 28 3 Device Operation 2 Device Operation 1 Device Operation 14 Channel Dissipation Channel Dissipation 0 50 100 150 Ta (°C) 200 0 50 100 150 Tc (°C) 200 Ambient Temperature Case Temperature 50 I D (A) 20 10 5 Maximum Safe Operation Area Typical Output Characteristics 5 10 V 4V Pulse Test PW D C O pe 10 = 10 10 0 µs µs I D (A) 4 3V 3 1 m s m (1 Drain Current 2 1 ra t io n sh Drain Current s ot 2 2.5 V 1 VGS = 2 V 0.5 Operation in = 25 this area is °C ) 0.2 limited by R DS(on) (T c ) 0.1 0.05 1 Ta = 25 °C 3 10 30 100 300 1000 Drain to Source Voltage V DS (V) 0 4 8 12 Drain to Source Voltage 16 20 V DS (V) 3 4AK19 Drain to Source Saturation Voltage vs. Gate to Source Voltage V DS(on) (V) 2.0 Pulse Test ID=5A Typical Transfer Characteristics 5 V DS = 10 V Pulse Test (A) 4 1.6 ID Drain to Source Voltage 3 1.2 Drain Current 2 0.8 Tc = 75°C 1 25°C –25°C 2A 1A 0.4 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 0 2 4 6 Gate to Source Voltage 8 10 V GS (V) Static Drain to Source on State Resistance R DS(on) ( Ω) Drain to Source On State Resistance R DS(on) ( Ω ) Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 2 1 0.5 0.2 0.1 0.05 0.1 0.2 VGS = 4 V 10 V Static Drain to Source on State Resistance vs. Temperature 1.0 Pulse Test 0.8 ID=5A 0.6 V GS = 4 V 0.4 10 V 0.2 0 –40 2A 1A 5A 1 A, 2 A 0.5 1 2 5 10 Drain Current I D (A) 20 0 40 80 120 160 Case Temperature Tc (°C) 4 4AK19 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) 10 5 Tc = –25 °C 2 75 °C 1 25 °C 0.5 Reverse Recovery Time trr (ns) 5000 Body–Drain Diode Reverse Recovery Time 2000 1000 500 200 100 50 0.1 di/dt = 50 A/µs V GS = 0, Ta = 25°C 0.2 0.5 1 2 5 10 Reverse Drain Current I DR (A) 0.2 0.1 0.1 V DS = 10 V Pulse Test 0.2 0.5 1 2 5 10 Drain Current I D (A) 1000 300 Capacitance C (pF) 100 30 10 3 1 0.3 0.1 0 Typical Capacitance vs. Drain to Source Voltage V DS (V) VGS = 0 f = 1 MHz Coss Ciss 100 Dynamic Input Characteristics V GS (V) Gate to Source Voltage 5 20 VGS VDS 60 V DD = 25 V 50 V 80 V 12 80 16 Drain to Source Voltage 40 V DD = 25 V 50 V 80 V 8 ID=5A 4 0 20 Crss 20 10 20 30 40 50 0 Drain to Source Voltage V DS (V) 4 8 12 16 Gate Charge Qg (nc) 4AK19 Reverse Drain Current vs. Souece to Drain Voltage 5 Reverse Drain Current I DR (A) Pulse Test 10 5 Switching Time t (µs) 2 Switching Characteristics t d(off) 4 tf 1 0.5 0.2 0.1 0.1 tr t d(on) V GS = 10 V, V DD = 30 V PW = 20 µs, duty < 1 % 0.2 0.5 1 Dra.


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