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5HN02M
N-channel MOS type silicon field effect transistor
Description
5HN02M No. 5HN02M µ µ µ µ Ω Ω 0.425 10V 0V VIN VIN VDD=25V ID=100mA RL=250Ω 0.15 3 2.1 1.250 0 0.1 PW=10µs D.C. 1% D G VOUT 0.425 5HN02M P.G 50Ω 1 2 0.65 0.65 2.0 0.3 0.9 0.6 S 0.2 0.3 5HN02M ° Ω ° Ω ° ° ° Ω ° ° ° Ω ° ° ° 5HN02M ° ° ° ° ° ° ° 5HN02M ...
Sanyo Semicon Device
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5HN02M
N-channel MOS type silicon field effect transistor
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