BA592

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 BA592 Band-switching diode Preliminary specification File under Discrete Semiconductors, SC01 1998 May 07 Philips Semiconductors Preliminary specification Band-switching diode FEATURES Small plastic SMD package Low diode capacitance Low diode forward resistance Small inductance. APPLICATIONS Low loss band-switching in VHF television tuners Surface mount band-switching circuits. DESCRIPTION Planar, high performance band-switch diode in a small SMD plastic package (SOD323). PINNING SOD323 PIN 1 2 BA592 ndbook, halfpage 1 Top view Marking code: A2. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Ptot Tstg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature TS = 90 °C CONDITIONS. ,  anode MIN. − − − −65 −65 DESCRIPTION cathode 2 MAM387 Fig.1 Simplified outline. MAX. 35 100 500 +150 +150 UNIT V mA mW °C °C 1998 May 07 2 Philips Semiconductors Preliminary specification Band-switching diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR Cd rD 1/gp LS Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS VALUE 120 PARAMETER forward voltage reverse current diode capacitance diode forward resistance reverse resistance series ...