AM band-switching diode
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D050
BA423A AM band-switching diode
Product specification Supersed...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D050
BA423A AM band-switching diode
Product specification Supersedes data of March 1982 1996 Mar 13
Philips Semiconductors
Product specification
AM band-switching diode
FEATURES Continuous reverse voltage: max. 20 V Continuous forward current: max. 50 mA Low diode capacitance: max. 2.5 pF Low diode forward resistance: max. 1.2 Ω. APPLICATION Band switching in AM radio receivers.
The diodes are type branded.
BA423A
DESCRIPTION Planar band-switching diode in a hermetically sealed glass SOD68 (DO-34) package.
k handbook, halfpage
a
MAM156
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature junction temperature PARAMETER MIN. − − −65 − MAX. 20 50 +150 150 V mA °C °C UNIT
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current see Fig.3 VR = 20V VR = 20 V; Tj = 125 °C Cd rD diode capacitance diode forward resistance f = 1 MHz; VR = 3 V; see Fig.4 IF = 10 mA; f = 1 MHz; see Fig.5 100 5 2.5 1.2 nA µA pF Ω CONDITIONS IF = 50 mA; see Fig.2 MAX. 0.9 V UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a FR4 printed-circuit board without metallization pad. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambi...
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