BA314

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BA314 Low-voltage stabistor Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Mar 21 Philips Semiconductors Product specification Low-voltage stabistor FEATURES Low-voltage stabilization Forward voltage range: 610 mV to 940 mV Total power dissipation: max. 400 mW. APPLICATIONS Low-voltage stabilization e.g. – Bias stabilizer in class-B output stages – Clipping – Clamping – Meter protection. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Ptot Tstg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Tamb = 25 °C CONDITIONS MIN. − − − −65 − handbook, halfpage k BA314 DESCRIPTION Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package. a MAM246 Diodes are type branded. Fig.1 Simplified outline (SOD27; DO-35) and symbol. MAX. 5 200 400 +200 200 V UNIT mA mW °C °C 1996 Mar 21 2 Philips Semiconductors Product specification Low-voltage stabistor ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS see Fig.2 IF = 0.1 mA IF = 1 mA IF = 5 mA IF = 10 mA IF = 100 mA IR rdif SF Cd reverse current differential resistance temperature coefficient diode capacitance VR = 4 V IF = 1 mA; f = 1 kHz IF = 10 mA; f = 1 kHz IF = 1 mA VR = 0 V; f = 1 MHz 610 680 730 750 850 − − − ...