Datasheet
7 Circuits Darlinton Transistor Array
BA12003B BA12003BF BA12004B BA12004BF
General Description BA12003B/BF,...
Datasheet
7 Circuits Darlinton
Transistor Array
BA12003B BA12003BF BA12004B BA12004BF
General Description BA12003B/BF,BA12004B/BFare darlinton
transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode.
Features ■ Built-in 7 circuits ■ High output break down voltage ■ High DC output current gain ■ Built-in input resistor to limit base current ■ Built-in output surge absorption clamp diode
Key Specifications
■ Output break down voltage:
VCE=60V(max)
■ Output current:
Io=500mA/ch(max)
■ Operating supply voltage range: -0.5V to +30V
■ Operating temperature range:
-40°C to +85°C
■ DC current gain:
hfe=1000(min)
■ Input resistor:
BA12003B/BF Rin=2.7kΩ
BA12004B/BF Rin=10.5kΩ
Packages DIP16 SOP16
W(Typ) x D(Typ) x H(Max) 19.40mm x 6.50mm x 7.95mm 10.00mm x 6.20mm x 1.71mm
Applications ■ Motor Drivers ■ LED Drivers ■ Solenoid Drivers ■ Low Side Switch
Typical Application Circuit
VCC
VCC
DIP16
SOP16
BA12003B / BA12004B BA12003BF / BA12004BF
VCC
16 15 14 13 12 11 10 9
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μCOM
○Product structure: Silicon monolithic integrated circuit
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○This product has not designed protection against radioactive rays
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TSZ02201-0RCR0GZ00100-1-2 12.May.2015 Rev.002
BA12003B BA12003BF BA12004B BA12004BF
Pin Configuration
DIP16 / SOP16 (TOP VIEW)
OUT 1
OUT 2
OUT 3
OUT 4
OUT 5
OUT OUT 67
COM
16 15 14 13 12 11 10 9
Block Diagram
16 15...