Document
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
B40 - B380/C1500R
SILICON BRIDGE RECTIFIERS
PRV : 100 - 900 Volts Io : 1.5 Amperes
FEATURES :
* High case dielectric strength * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Pb / RoHS Free
0.22 (5.59) 0.18 (4.57)
WOB
0.39 (10.0) 0.31 (7.87)
+ AC -
1.00 (25.4) MIN.
1.10 (27.9) MIN.
0.034 (0.86) 0.028 (0.71)
MECHANICAL DATA :
* Case : Reliable low cost construction utilizing molded plastic technique
* Epoxy : UL94V-0 rate flame retardant * Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 1.29 grams
AC + AC
0.22 (5.59) 0.18 (4.57)
0.22 (5.59) 0.18 (4.57)
Dimension in inches and (millimeter)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Input Voltage R+C -Load
Maximum DC Blocking Voltage
Maximum Average Forward Current For
Free Air Operation at Tc = 45 °C R+L -Load
C -Load
Peak Forward Surge Current Single half sine wave
on rated load (JEDEC Method) at TJ = 125 °C
Rating for fusing at TJ = 125°C ( t < 100 ms. )
Maximum Series Resistor C-Load VRMS = ± 10%
Maximum load Capacitance + 50%
-10%
Maximum Forward Voltage per Diode at IF = 1.5 A
Maximum Reverse Current at Rated Repetitive
Peak Voltage per Diode
Ta = 25 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL B40- B80- B125- B250- B380C1500R C1500R C1500R C1500R C1500R
VRRM
100
200
300
600
900
VRMS
40
80
125
250
380
VDC
100
200
300
600
900
UNIT
V V V
IF(AV)
IFSM I2t Rt CL VF IR RθJA TJ TSTG
1.0 5000
1.6 1.5
50
10
2.0
4.0
8.0
2500 1000 500
1.0
10
36 - 50 to + 125 - 50 to + 150
12.0 200
A
A A2S Ω μF V μA °C/W °C °C
Notes :
1 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board with, 0.22" x 0.22" (5.5 x 5.5 mm) copper Pads.
Page 1 of 2
Rev. 03 : May 6, 2013
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
BRIDGE OUTPUT FULL WAVE RECTIFIED CURRENT
AVERAGE AMPERES
FORWARD CURRENT, AMPERES
RATING AND CHARACTERISTIC CURVES ( B40-B380/C1500R )
FIG.1 - DERATING CURVE
FOR OUTPUT RECTIFIED CURRENT B40 C1500R - B125 C1500R
1.8
Resistive or
1.5
Inductive load.
1.2 Capacitive Load
< 500μF
0.9
500-5000μF
0.6 PC Board
0.375(9.5mm)
0.3 Copper Pads
0.22" x 0.22" (5.5mm x 5.5mm)
0 0 20 40 60 80 100 120 140
CASE TEMPERATURE, ( °C)
BRIDGE OUTPUT FULL WAVE RECTIFIED
CURRENT
FIG.2 - DERATING CURVE
FOR OUTPUT RECTIFIED CURRENT
B250 C1500R - B380 C1500R
1.8 Resistive or Inductive load.
1.5
1.2 Capacitive Load
0.9
< 500μF
500-5000μF
0.6
PC Board
0.375(9.5mm)
0.3
Copper Pads 0.22" x 0.22" (5.5mm x 5.5mm)
0 20
40
60
80 100 120 140
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
20 10
1
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10 TJ = 100 °C
1.0
REVERSE CURRENT, MICROAMPERES
TJ = 25 °C 0.1
Pulse Width = 300μs
1 % Duty Cycle
0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
FIG.5 - MAXIMUM NON-REPETITIVE PEAK FORWARD CURRENT
60
45
30
15
0 12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
CAPACITANCE, pF
0.1
TJ = 25 °C
0.01 0
20 40 60 80 100 120 140
PERCENT OF RATED REVERSE VOLTAGE, (%)
FIG.6 - TYPICAL JUNCTION CAPACITANCE PER BRIDGE ELEMENT
100
60
40
20
10
TJ = 25 °C
6
f = 1MHz
4
Vsig = 50mVp-p
2 1 0.1 0.2 0.6 1 2 4 6 10 20 40 100
REVERSE VOLTAGE, VOLTS
PEAK FORWARD CURRENT, AMPERES
Page 2 of 2
Rev. 03 : May 6, 2013
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