Integrated High Power Amp 900 MHz
A
DESCRIPTION The AWT921 is a monolithic amplifier for use in communication systems that require high gain and output in...
Description
A
DESCRIPTION The AWT921 is a monolithic amplifier for use in communication systems that require high gain and output intercept point. This device has been specifically designed for multi carrier and micro cell base station applications. FEATURES l High output power levels l High Efficiency l True Surface Mount Package with Integrated Heat Slug l Internal Bias Circuit Requiring Nominal Input Voltages +10% l Low Cost l Off Chip Output Matching Circuit Allows Application Optimization
AWT921S11
Integrated High Power Amp 900 MHz Advanced Product information Rev. 6
S11 SSOP-28 Wide Body 28 Pin Wide Body w/ Heat Slug
ABSOLUTE MAXIMUM RATINGS
PIN 2 3 4,5 8,9 SIGNAL VDD RFIN VD1 VD2 MAX RATING +7VDC +20 dBm +10 VDC +10 VDC PIN 11 12 18,19,20,21,22,23,24,25 SIGNAL VREF VSS VD3 MAX RATING +7 VDC -7 VDC +10 VDC
Operating Temperature: -30 to + 85o C Storage Temperature: -55 to + 100o C
ELECTRICAL SPECIFICATIONS: (1)
PARAMETER Frequency Power Output Power Added Efficiency Gain @ POUT = +39 dBm @ POUT = +30 dBm (3) Harmonics 2nd 3rd 4th Stability: - 60 dBc all spurious outputs relative to desired signal Bias supply currents SYMBOL fo POUT ηEff PG MIN 925 TYP + 39 40 29 30 37 47 50 3:1 8 1.2 8 100 250 200 4.5
AWT921S11 Advanced Product Information - Rev. 6
(Pin +12 dBm, fo = 925-960 MHz, VDS1 = VDS2 = VDS3 = 8.5V, VSS = - 3V,VREF=+5V,VDD=+5V,Tc=25C, 50W System (2)
MAX 960 -
UNITS MHz dBm % dB
-
-
dBc VSWR load, all phase angles mA mA mA mA mA mA dB dB dB C/W
ISS IREF IDD IDQ1 I...
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