Triple 3-Input NAND Gates
DM54L10 Triple 3-Input NAND Gates
June 1989
DM54L10 Triple 3-Input NAND Gates
General Description
This device contains...
Description
DM54L10 Triple 3-Input NAND Gates
June 1989
DM54L10 Triple 3-Input NAND Gates
General Description
This device contains three independent gates each of which performs the logic NAND function
Connection Diagram
Dual-In-Line Package
TL F 6619 – 1
Order Number DM54L10J or DM54L10W See NS Package Number J14A or W14B
Function Table
Y e ABC Inputs A X X L H B X L X H C L X X H Output Y H H H L
H e High Logic Level L e Low Logic Level X e Either Low or High Logic Level
C1995 National Semiconductor Corporation
TL F 6619
RRD-B30M105 Printed in U S A
Absolute Maximum Ratings (Note)
If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Supply Voltage 8V Input Voltage 5 5V Operating Free Air Temperature Range b 55 C to a 125 C DM54L b 65 C to a 150 C Storage Temperature Range Note The ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed The device should not be operated at these limits The parametric values defined in the ‘‘Electrical Characteristics‘‘ table are not guaranteed at the absolute maximum ratings The ‘‘Recommended Operating Conditions’’ table will define the conditions for actual device operation
Recommended Operating Conditions
Symbol VCC VIH VIL IOH IOL TA Parameter Min Supply Voltage High Level Input Voltage Low Level Input Voltage High Level Output Current Low Level Output Current Free Air Operating Temperatu...
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