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DM54L10

National Semiconductor

Triple 3-Input NAND Gates

DM54L10 Triple 3-Input NAND Gates June 1989 DM54L10 Triple 3-Input NAND Gates General Description This device contains...


National Semiconductor

DM54L10

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Description
DM54L10 Triple 3-Input NAND Gates June 1989 DM54L10 Triple 3-Input NAND Gates General Description This device contains three independent gates each of which performs the logic NAND function Connection Diagram Dual-In-Line Package TL F 6619 – 1 Order Number DM54L10J or DM54L10W See NS Package Number J14A or W14B Function Table Y e ABC Inputs A X X L H B X L X H C L X X H Output Y H H H L H e High Logic Level L e Low Logic Level X e Either Low or High Logic Level C1995 National Semiconductor Corporation TL F 6619 RRD-B30M105 Printed in U S A Absolute Maximum Ratings (Note) If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Supply Voltage 8V Input Voltage 5 5V Operating Free Air Temperature Range b 55 C to a 125 C DM54L b 65 C to a 150 C Storage Temperature Range Note The ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed The device should not be operated at these limits The parametric values defined in the ‘‘Electrical Characteristics‘‘ table are not guaranteed at the absolute maximum ratings The ‘‘Recommended Operating Conditions’’ table will define the conditions for actual device operation Recommended Operating Conditions Symbol VCC VIH VIL IOH IOL TA Parameter Min Supply Voltage High Level Input Voltage Low Level Input Voltage High Level Output Current Low Level Output Current Free Air Operating Temperatu...




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