DM-231

DM-231 Magnetoresistance Element For the availability of this product, please contact the sales office. Description DM-231 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate. It is suitable for angle of rotation detection. Features Low magnetic field and high sensitivity: bridge type stands for large output voltage 150 mVp-p (Min.) at VCC=5 V, H=14400 A/m Fitted with bias magnet: stable output. High reliability: Achieved through silicon nitride protective film. Structure Ferromagnetic thin film circuit (With ferrite magnet) Applications Non-contact angle of rotation detection. Contactless potentiometer. Absolute Maximum Ratings (Ta=25 °C) Supply voltage VCC 10 Storage temperature Tstg –30 to +100 M-118 (Plastic) V °C Recommended Operating Conditions Supply voltage VCC 5 Operating temperature Topr –20 to + 75 Electrical Characteristics Item Output voltage Midpoint potential Midpoint potential difference/Output voltage Total resistance Symbol VO VA, VB |VA-VB| VO RT V °C Ta=25 °C Condition VCC=5 V , H=14400 A/m (Peak) AC magnetic field θ =0 ° VCC=5 V , H=0 A/m VCC=5 V , H=0 A/m H=14400 A/m (Peak) AC magnetic field θ =0 ° Min. 150 2.475 Typ. Max. Unit mVp-p 2.525 15 V % Ω 500 650 800 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or ot...