ED1502

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 ED1502 NPN general purpose transistor Product specification Supersedes data of 1997 May 01 1999 Apr 27 Philips Semiconductors Product specification NPN general purpose transistor FEATURES Low current (max. 25 mA) Low voltage (max. 20 V) High gain. APPLICATIONS General purpose switching and amplification. 1 handbook, halfpage ED1502 PINNING PIN 1 2 3 emitter base collector DESCRIPTION DESCRIPTION NPN transistor in a plastic TO-92; SOT54 package. 2 3 3 2 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Refer to TO-92; SOT54 standard mounting conditions. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 40 20 4 25 25 25 500 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 27 2 Philips Semiconductors Product specification NPN general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to TO-92; SOT54 standard mounting conditions. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off curre...