DatasheetsPDF.com

ECP200

EIC discrete Semiconductors
Part Number ECP200
Manufacturer EIC discrete Semiconductors
Description 2.0 WATT POWER AMPLIFIER
Published Apr 1, 2005
Detailed Description PRELIMINARY DATA SHEET ECP200 2.0 WATT POWER AMPLIFIER Product Features 1800 - 2300MHz 33 dBm P1dB High Linearity: 49 ...
Datasheet PDF File ECP200 PDF File

ECP200
ECP200

Overview
PRELIMINARY DATA SHEET ECP200 2.
0 WATT POWER AMPLIFIER Product Features 1800 - 2300MHz 33 dBm P1dB High Linearity: 49 dBm OIP3 High Efficiency: PAE > 50% 11 dB Linear Gain Single 5V Supply High Reliabilty Class A or AB operation Applications Basestations and Repeaters CDMA/GSM/TDMA/EDGE PCS/CDMA2000/IMT2000/UMTS Multi-carrier systems Packages Available QFN-16 (4x4mm) SOIC-8 Product Description The ECP200 is a single stage, 2.
0W power amplifier that offers excellent linearity and efficiency.
This device was developed using EiC’s proprietary InGaP Heterojunction Bipolar Transistor (HBT) process.
The devices have a 50 Ohms input impedance and pre-matched output.
It is optimized for multica...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)