EC3H07B

Ordering number : ENN6578 EC3H07B NPN Epitaxial Planar Silicon Transistor EC3H07B UHF to S Band Low-Noise Amplifier and OSC Applications Features Package Dimensions 0.65 0.05 Low noise : NF=1.5dB typ (f=2GHz). unit : mm High cut-off frequency : fT=10GHz typ (VCE=1V). 2183 : fT=12.5GHz typ (VCE=3V). Low operating voltage. 0.15 High gain : S21e2=9.5dB typ (f=2GHz). 0.05 Ultraminiature (1006 size) and thin (0.5mm) leadless 1 package. 0.25 0.4 0.35 0.2 0.15 [EC3H07B] 2 1.0 3 0.5 0.25 0.05 0.05 (Bottom View) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to- Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 1 : Base 2 : Emitter 3 : Collector SANYO : E-CSP1006-3 Ratings 9 4 2 30 100 150 --55 to +150 Unit V V V mA mW °C °C 0.6 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT1 fT2 Cob Cre S21e21 S21e22 NF VCB=5V, IE=0 VEB=1V, IC=0 VCE=1V, IC=5mA VCE=1V, IC=5mA VCE=3V, I C=15mA VCB=1V, f=1MHz VCB=1V, f=1MHz VCE=1V, IC=5mA, f=2GHz VCE=3V, IC=15mA, f=2GHz VCE=1V, IC=3mA, f=2GHz 8 100 8 10 12.5 0.55 0.4 9.5 10.5 1.5 2.3 0.7 Conditions Ratings min typ max 1.0 10 160 GHz GHz pF pF dB dB dB Unit µA µA ...