EC3H06B

Ordering number:ENN6524 NPN Epitaxial Planar Silicon Transistor EC3H06B UHF to S Band Low-Noise Amplifier and OSC Applications Features · Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=10dB typ (f=1.5GHz). · High cutoff frequency : fT=11GHz typ. · Low voltage, low current operation. (VCE=1V, IC=1mA) : fT=7GHz typ. : S21e2=5.5dB typ (f=1.5GHz). · Ultrasmall (1006size), slim (0.5mm) leadless package. Package Dimensions unit:mm 2183 [EC3H06B] 0.35 0.2 0.15 0.05 1 0.4 0.15 2 0.05 1.0 0.65 0.25 3 0.5 0.25 0.05 0.05 (Bottom view) 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 1 : Base 2 : Emitter 3 : Collector SANYO : E-CSP1006-3 0.5 Ratings 20 10 1.5 30 100 150 –55 to +150 Unit V V V mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT1 fT2 Cob Cre | S21e |2 1 | S21e |2 2 NF1 NF2 VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=10mA VCE=5V, VCE=1V, IC=10mA IC=1mA 100 8 11 7 0.45 0.30 8 10 5.5 1.4 0.9 3.0 0.7 Conditions Ratings min typ max 1.0 10 180 GHz GHz pF pF dB dB dB dB Unit µA µA VCB=10V, f=1MHz VCB=10V, f=...