EC3H05B

Ordering number : ENN6574 EC3H05B NPN Epitaxial Planar Type Silicon Transistor EC3H05B VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions unit : mm 2183 0.35 0.2 0.15 0.05 1 0.4 0.25 Low noise : NF=1.2dB typ (f=1GHz). High gain : S21e2=13dB typ (f=1GHz). Hige cutoff frequency : fT=9.0GHz typ. Ultraminiature (1006 size) and thin (0.5mm) leadless package. [EC3H05B] 0.15 2 0.05 1.0 0.65 3 0.5 0.25 0.05 0.05 (Bottom View) 1 : Base 2 : Emitter 3 : Collector SANYO : E-CSP1006-3 0.6 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 16 8 1.5 50 100 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT Cob S21e2 NF Conditions VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=15mA VCE=5V, IC=15mA VCB=10V, f=1MHz VCE=5V, IC=15mA, f=1GHz VCE=5V, IC=5mA, f=1GHz 10 Ratings min typ max 1.0 10 100 9.0 0.55 13 1.2 2.5 1.2 180 GHz pF dB dB Unit µA µA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-suppo...