Ordering number : ENN6576
EC3H03B
NPN Epitaxial Planar Type Silicon Transistor
EC3H03B
VHF to UHF Wide-Band Low-Noise ...
Ordering number : ENN6576
EC3H03B
NPN Epitaxial Planar Type Silicon
Transistor
EC3H03B
VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications
Features
Package Dimensions
unit : mm 2183
0.35 0.2 0.15 0.05 1
0.25
Low noise : NF=1.1dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cut-off frequency : fT=7.5GHz typ. Ultraminiature (1006 size) and thin (0.5mm) leadless package.
[EC3H03B]
0.15
2
0.05 1.0
0.65
0.4
3 0.5
0.25
0.05
0.05
(Bottom View)
1 : Base 2 : Emitter 3 : Collector SANYO : E-CSP1006-3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions
0.6
0.5
Ratings 20 12 2 100 100 150 --55 to +150
Unit V V V mA mW °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT Cob Cre S21e2 NF VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=30mA VCE=5V, IC=30mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=5V, IC=30mA, f=1GHz VCE=5V, IC=7mA, f=1GHz 10 100 6 7.5 0.9 0.65 12 1.1 2.0 1.4 Conditions Ratings min typ max 1.0 10 180 GHz pF pF dB dB Unit µA µA
Any and all SANYO products described or contained herein do not have specifications that can handle applic...