EC3H03B

Ordering number : ENN6576 EC3H03B NPN Epitaxial Planar Type Silicon Transistor EC3H03B VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications Features Package Dimensions unit : mm 2183 0.35 0.2 0.15 0.05 1 0.25 Low noise : NF=1.1dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cut-off frequency : fT=7.5GHz typ. Ultraminiature (1006 size) and thin (0.5mm) leadless package. [EC3H03B] 0.15 2 0.05 1.0 0.65 0.4 3 0.5 0.25 0.05 0.05 (Bottom View) 1 : Base 2 : Emitter 3 : Collector SANYO : E-CSP1006-3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 0.6 0.5 Ratings 20 12 2 100 100 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT Cob Cre S21e2 NF VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=30mA VCE=5V, IC=30mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=5V, IC=30mA, f=1GHz VCE=5V, IC=7mA, f=1GHz 10 100 6 7.5 0.9 0.65 12 1.1 2.0 1.4 Conditions Ratings min typ max 1.0 10 180 GHz pF pF dB dB Unit µA µA Any and all SANYO products described or contained herein do not have specifications that can handle applic...