EC3H02C

Ordering number : ENN6579 EC3H02C NPN Epitaxial Planar Silicon Transistor EC3H02C VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions unit : mm 2184 [EC3H02C] 0.5 0.3 0.05 0.6 0.2 0.05 0.2 Low noise : NF=1.0dB typ (f=1GHz). High gain :S21e2=12dB typ (f=1GHz). High cutoff frequency : fT=7GHz typ. Ultraminiature (1008 size) and thin (0.6mm) leadless package . 3 0.05 4 1.0 2 1 0.3 0.05 (Bottom View) 1 : Base 2 : Emitter 3 : Collector 4 : Collector SANYO : E-CSP1008-4 0.8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 10 2 70 100 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwitch Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT Cob Cre S21e21 S21e22 NF Conditions VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=20mA VCE=5V, IC=20mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=5V, IC=20mA, f=1GHz VCE=2V, IC=3mA, f=1GHz VCE=5V, IC=7mA, f=1GHz Ratings min typ max 1.0 10 100 5 7 0.7 0.45 9 12 8.5 1.0 1.8 1.2 180 GHz pF pF dB dB dB Unit µA µA Any and all SANYO products described or contained herein do not have specifications that can handle ...