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DZB11C Dataheets PDF



Part Number DZB11C
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 1.0W Zener Diodes
Datasheet DZB11C DatasheetDZB11C Datasheet (PDF)

Ordering number :EN653F DZB6.2 to DZB30 Sillicon Diffused Junction Type 1.0W Zener Diodes Features · Plastic molded structure. · Voltage regulator use. · Power dissipation:P=1.0W. · Zener voltage:VZ=6.2 to 30V Package Dimensions unit:mm 1083 [DZB6.2 to DZB30] C:Cathode A:Anode Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Power Dissipation Junction Temperature Storage Temperature Symbol P Tj Tstg Conditions Ratings 1.0 150 –40 to +150 Unit W ˚C ˚C Electrical Characteristic.

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Ordering number :EN653F DZB6.2 to DZB30 Sillicon Diffused Junction Type 1.0W Zener Diodes Features · Plastic molded structure. · Voltage regulator use. · Power dissipation:P=1.0W. · Zener voltage:VZ=6.2 to 30V Package Dimensions unit:mm 1083 [DZB6.2 to DZB30] C:Cathode A:Anode Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Power Dissipation Junction Temperature Storage Temperature Symbol P Tj Tstg Conditions Ratings 1.0 150 –40 to +150 Unit W ˚C ˚C Electrical Characteristics at Ta = 25˚C Type No. Zener Characteristics Zener Voltage VZ [V] typ DZB6.2U 6.8C 7.5C 8.2C 9.1C 10C 11C 12C 13C 15C 16C 18C 20C 22C 24C 27C 30C 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 min 5.60 6.45 7.13 7.79 8.65 9.50 10.50 11.40 12.40 14.30 15.20 17.10 19.00 20.90 22.80 25.70 28.50 max 6.80 7.14 7.81 8.61 9.55 10.50 11.50 12.60 13.60 15.80 16.80 18.90 21.00 23.10 25.20 28.30 31.50 Dynamic Resistance [Ω] max 60 60 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 Measured Current IZ [mA] –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 VF [V] max 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Forward Voltage Drop Measured Current [A] IR [µA] max –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –10 –2.0 –3.0 –4.5 –4.9 –5.5 –6.0 –7.0 –8.0 –9.0 –10.0 –11.0 –13.0 –14.0 –16.0 –17.0 –19.0 –21.0 Reverse Current Measured Voltage [V] SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 33098HA (KT)/13196GI/2089TA/1199MO/9205KI, TS No.653-1/2 DZB6.2 to 30 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 1998. Specifications and information herein are subject to change without notice. PS No.653-2/2 .


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