Document
FQD3P20 / FQU3P20
April 2000
QFET
FQD3P20 / FQU3P20
200V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
TM
Features
• • • • • • -2.4A, -200V, RDS(on) = 2.7Ω @VGS = -10 V Low gate charge ( typical 6.0 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
S
!
G! G S
D-PAK
FQD Series
I-PAK
G D S
FQU Series
!
D
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQD3P20 / FQU3P20 -200 -2.4 -1.52 -9.6 ±30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
150 -2.4 3.7 -5.5 2.5 37 0.29 -55 to +150 300
TJ, TSTG TL
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8from case for 5 seconds
Thermal Characteristics
Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 3.4 50 110 Units °CW °CW °CW
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International Rev. A, April 2000
FQD3P20 / FQU3P20
Electrical CharacteristicsT
Symbol Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -200 V, VGS = 0 V VDS = -160 V, TC = 125°C VGS = -30 V, VDS = 0 V VGS = 30 V, VDS = 0 V -200 -------0.18 -------1 -10 -100 100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 µA VGS = -10 V, ID = -1.2 A VDS = -40 V, ID = -1.2 A
(Note 4)
-3.0 ---
-2.06 1.18
-5.0 2.7 --
V Ω S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz ---190 45 7.5 250 60 10 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -100 V, ID = -2.8 A, RG = 25 Ω
(Note 4, 5)
--------
8.5 35 12 25 6.0 1.7 2.9
25 80 35 60 8.0 ---
ns ns ns ns nC nC nC
VDS = -160 V, ID = -2.8 A, VGS = -10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -2.4 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -2.8 A, dIF / dt = 100 A/µs
(Note 4)
------
---100 0.34
-2.4 -9.6 -5.0 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 39mH, IAS = -2.4A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD -2.8A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A, April 2000
FQD3P20 / FQU3P20
Typical Characteristics
-I D, Drain Current [A]
10
0
-ID , Drain Current [A]
VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V Top :
10
0
150 25 -55
Notes : 1. VDS = -40V 2. 250 s Pulse Test
10
-1
Notes : 1. 250 s Pulse Test 2. TC = 25
10
-1
10
0
10
1
10
-1
2
4
6
8
10
-VDS, Drain-Source Voltage [V]
-VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
VGS = - 10V 6 VGS = - 20V 4
-IDR , Reverse Drain Current [A]
RDS(on) [ Ω ], Drain-Source On-Resistance
8
10
0
150
25
2
Note : TJ = 25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
-1
0 0 2 4 6 8
10
-ID , Drain Current [A]
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
400
Ciss = Cgs + Cgd (Cds = shorted) Cos.