Document
FQD2N50B / FQU2N50B
May 2000
QFET
FQD2N50B / FQU2N50B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
TM
Features
• • • • • • 1.6A, 500V, RDS(on) = 5.3Ω @VGS = 10 V Low gate charge ( typical 6.0 nC) Low Crss ( typical 4.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D D
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G! G S
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D-PAK
FQD Series
I-PAK
G D S
FQU Series
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S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQD2N50 / FQU2N50 500 1.6 1.0 6.4 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
120 1.6 3.0 4.5 2.5 30 0.24 -55 to +150 300
TJ, TSTG TL
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 4.17 50 110 Units °C/W °C/W °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International Rev. A, May 2000
FQD2N50B / FQU2N50B
Electrical Characteristics
Symbol Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 500 ------0.48 ------1 10 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VDS = VGS, ID = 250 mA VGS = 10 V, ID = 0.8 A VDS = 50 V, ID = 0.8 A
(Note 4)
2.3 3.6 ---
3.0 4.3 4.2 1.3
3.7 5.0 5.3 --
V V Ω S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---180 30 4 230 40 6 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 400 V, ID = 2.1 A, VGS = 10 V
(Note 4, 5)
VDD = 250 V, ID = 2.1 A, RG = 25 Ω
(Note 4, 5)
--------
6 25 10 20 6.0 1.3 3.0
20 60 30 50 8.0 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 1.6 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 2.1 A, dIF / dt = 100 A/µs
(Note 4)
------
---195 0.69
1.6 6.4 1.4 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 85mH, IAS = 1.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 2.1A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A, May 2000
FQD2N50B / FQU2N50B
Typical Characteristics
Top :
ID , Drain Current [A]
10
0
ID , Drain Current [A]
Bottom :
VGS 15 V 10 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
150℃ 10
0
25℃ -55℃
10
-1
※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃
※ Notes : 1. VDS = 50V 2. 250μ s Pulse Test
10
-2
10
-1
10
0
10
1
10
-1
2
4
6
8
10
VDS , Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
18
VGS = 10V 12 VGS = 20V 9
IDR , Reverse Drain Current [A]
15
RDS(on) [ Ω ], Drain-Source On-Resistance
10
0
6
150℃
25℃
※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test
3
※ Note : TJ = 25℃
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Volt.