FQD20N06LE / FQU20N06LE
May 2001
QFET
FQD20N06LE / FQU20N06LE
60V LOGIC N-Channel MOSFET
General Description
These N-C...
FQD20N06LE / FQU20N06LE
May 2001
QFET
FQD20N06LE / FQU20N06LE
60V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
TM
Features
17.2A, 60V, RDS(on) = 0.06Ω @ VGS = 10V Low gate charge ( typical 9.5 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating Low level gate drive requirements allowing direct operation form logic drivers Built-in ESD Protection Diode D D
G G S
D-PAK
FQD Series
I-PAK
G D S
FQU Series
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQD20N06LE / FQU20N06LE 60 17.2 10.9 68.8 ± 20
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Ene...