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FQU17P06 Dataheets PDF



Part Number FQU17P06
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 60V P-Channel MOSFET
Datasheet FQU17P06 DatasheetFQU17P06 Datasheet (PDF)

FQD17P06 / FQU17P06 May 2001 QFET FQD17P06 / FQU17P06 60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications suc.

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FQD17P06 / FQU17P06 May 2001 QFET FQD17P06 / FQU17P06 60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. TM Features • • • • • • -12A, -60V, RDS(on) = 0.135Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 80 pF) Fast switching 100% avalanche tested Improved dv/dt capability S D G! ! ● ● ▶ ▲ ● G S D-PAK FQD Series I-PAK G D S FQU Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD17P06 / FQU17P06 -60 -12 -7.6 -48 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 300 -12 4.4 -7.0 2.5 44 0.35 -55 to +150 300 TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 2.85 50 110 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Fairchild Semiconductor Corporation Rev. A2. May 2001 FQD17P06 / FQU17P06 Elerical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -60 V, VGS = 0 V VDS = -48 V, TC = 125°C VGS = -25 V, VDS = 0 V VGS = 25 V, VDS = 0 V -60 -------0.06 -------1 -10 -100 100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 µA VGS = -10 V, ID = -6.0 A VDS = -30 V, ID = -6.0 A (Note 4) -2.0 --- -0.11 8.7 -4.0 0.135 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz ---690 325 80 900 420 105 pF pF pF Switching Characteri.


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