60V P-Channel MOSFET
FQD11P06 / FQU11P06 — P-Channel QFET® MOSFET
FQD11P06 / FQU11P06
P-Channel QFET® MOSFET
-60 V, -9.4 A, 185 mΩ
Januray ...
Description
FQD11P06 / FQU11P06 — P-Channel QFET® MOSFET
FQD11P06 / FQU11P06
P-Channel QFET® MOSFET
-60 V, -9.4 A, 185 mΩ
Januray 2014
Description
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications..
Features
-9.4 A, -60 V, RDS(on) = 185 mΩ (Max.) @ VGS = -10 V, ID = -4.7 A
Low Gate Charge (Typ. 13 nC) Low Crss (Typ. 45 pF) 100% Avalanche Tested
G S
D
D-PAK
GDS
S
G
I-PAK
D
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering, 1/8" from case for 5 seconds
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
FQD11P06TM / FQU11P06TU -60 -9.4 -5.95 -37.6 ± 30 160 -9.4 3.8 -7.0 2.5 38 0.3
-55 to +150
300
Unit V A A A V mJ...
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