FQT3P20

FQT3P20 May 2001 QFET FQT3P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. TM Features -0.67A, -200V, RDS(on) = 2.7Ω @VGS = 10 V Low gate charge ( typical 6.0 nC) Low Crss ( typical 7.5 pF) Fast switching Improved dv/dt capability S ! D G! S G ● ● ▶ ▲ ● SOT-223 FQT Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 70°C) Drain Current - Pulsed (Note 1) FQT3P20 -200 -0.67 -0.53 -2.7 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 150 -0.67 0.25 -5.5 2.5 0.02 -55 to +150 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient * Ty...